SG75S12S discrete igbts SG75S12S i c a 75 v ce v 1200 dim. millimeter inches min. max. min. max. a 31.50 31.88 1.240 1.255 b 7 .80 8 .20 0.307 0.323 c 4 .09 4 .29 0.161 0.169 d 4 .09 4 .29 0.161 0.169 e 4 .09 4 .29 0.161 0.169 f 14.91 15.11 0.587 0.595 g 30.12 30.30 1.186 1.193 h 37.80 38.20 1.489 1.505 j 11.68 12.22 0.460 0.481 k 8 .92 9 .60 0.351 0.378 l 0 .76 0 .84 0.030 0.033 m 12.60 12.85 0.496 0.506 n 25.15 25.42 0.990 1.001 o 1 .98 2 .13 0.078 0.084 p 4 .95 5 .97 0.195 0.235 q 26.54 26.90 1.045 1.059 r 3 .94 4 .42 0.155 0.174 s 4 .72 4 .85 0.186 0.191 t 24.59 25.07 0.968 0.987 u -0.05 0.1 -0.002 0.004 v 3 .30 4 .57 0.130 0.180 w 0.780 0.830 19.81 21.08 dimensions so t -227(iso t op) maximum rated values (t vj = 25 c, unless specified otherwise) parameter symbol conditions values unit collector-emitter voltage v ces v ge shorted 1200 v dc collector current i c t hs = 70 c 75 a peak collector current i cm pulse: t p = 1ms, t hs = 70 c 150 a gate emitter voltage v ges +20 v total power dissipation p tot t hs = 25 c per switch 340 w igbt switching soa swsoa i c = 150a, v cem = 1200v, v cc < 1000v, v ge = +15v, t vj = 125 c voltages measured on auxiliary terminals igbt short circuit soa scsoa v cc = 900v, v cem = 1200v, t p = 10s, v ge = +15v, t vj = 125 c dc forward current i f 75 a peak forward current i fm pulse: t p = 1ms, t hs = 70 c 150 a _ _ _ _ maximum rated values (cont.) (t vj = 25 c, unless specified otherwise) parameter symbol conditions values unit junction temperature t vj -40 ~ 150 c storage temperature t tstg / t cop -40 ~ 125 c isolation voltage v iso 1min, f = 50hz 2500 v
SG75S12S discrete igbts igbt characteristic values (t vj = 25 c, unless specified otherwise) parameter sybmol conditions min. typ. max. unit t vj = 25 c 2.00 2.35 v collector-emitter saturation voltage v ce(sat) * i c = 75a, v ge = 15v 2.20 v collector cut-off current i ces v ce = 1200v, v ge = 0v, t vj = 125 c 6 ma gate-emitter leakage current i ges v ce = 0v, v ge = +20v, t vj = 125 c +500 na gate-emitter threshold voltage v ge(to) i c = 3ma, v ce = v ge 4.5 6.5 v total gate charge q ge i c = 75a, v ce = 600v, v ge = -15 to 15v 750 nc input capacitance c ies 6.5 nf output capacitance c oes 1.6 nf reverse transfer capacitance c res v ce = 25v, v ge = 0v, f = 1mhz 1.4 nf turn-on delay time t d(on) 0.1 s rise time t r 0.05 s turn-off delay time t d(off) 0.50 s fall time t f 0.09 s turn-on switching energy e on 8.5 mj e off i c = 75a, t vj = 125 c, v cc = 600v, v ge = +15v, inductive load, integrated up to: 3% v ce (e on ), 1% i c (e off ) 7.0 mj module stray inductance plus to minus l sdc 25 nh t hs = 25 c 1.25 resistance terminal-chip r cc'+ee' 1.90 m * note 1: collector emitter saturation voltage is given at die level. t vj = 125 c _ _ i c = 75a, v cc = 600v, r gon = 15 , t vj = 125 c, v ge = +15v _ i c = 75a, v cc = 600v, r goff = 15 , t vj = 125 c, v ge = +15v _ r gon = 15 r goff = 15 _ t hs = 125 c
SG75S12S discrete igbts thermal characteristics (t j = 25 c, unless specified otherwise) parameter symbol conditions min. typ. max. unit igbt thermal resistance junction to heatsink r th j-h igbt 0.370 c/w diode thermal resistance junction to heatsink 0.740 equivalent igbt thermal resistance junct. to case 0.235 equivalent diode thermal resistance junct. to case heatsink: flatness < +/-20m, roughness < 6m without ridge thermal grease: thickness: 30m < t < 50m 0.550 c/w r th j-h diode r th j-c igbt c/w r th j-c diode c/w diode characteristic values (t j = 25 c, unless specified otherwise) parameter symbol conditions min. typ. max. unit t vj = 25 c 2.00 2.40 forward voltage v f * i f = 75a 2.00 v reverse recovery current i rrm 75 a reverse recovery charge q rr 14 c reverse recovery time t rr i f = 75a, r gon = 15 , v cc = 600v, v ge = +15v, t vj = 125 c 0.35 s reverse recovery energy e rec i f = 75a, t vj = 125 c, v cc = 600v, r gon = 15 , v ge = +15v, inductive load, fully integrated 5.5 mj t hs = 25 c 1.25 resistance terminal-chip r cc'+ee' 1.90 m * note 2: forward voltage is gaiven at die level t vj = 125 c _ _ t hs = 125 c
SG75S12S discrete igbts fi g. 1 t y p. o u t p ut char ac t e r i st ics at t v j = 25 c fi g. 2 t y p. o u t p ut char ac t e r i st ics at t v j = 125 c fi g. 3 t y p. tr ans f e r char ac t e r i s t ics fi g. 4 ty p . ga te ch a r ge c h a r a c te ri sti
SG75S12S discrete igbts fi g. 5 t y p. sw it ching ener g i es per pulse v s on- st a t e cu r r e n t fi g. 6 t y p. sw it ching ener g i es per pulse v ga te re si s t o r fi g. 7 t y p . s w i t c h i n g t i m e s vs o n - st at e cu rre n t fi g. 8 ty p . s w i t ch i n g ti me s v s g a te re si sto r
SG75S12S discrete igbts fi g. 9 t y p. capacit an ces v s collect or - e m i t t e r volt ag e fi g. 10 t y p. diode f o r w ar d char a c t e r i st ics fi g. 11 t y p. rev e r s e recov e r y char act e r i s t ics v s f o r w ar d cu r r e n t fi g. 12 t y p. rev e r s e recov e r y char ac t e r i s t ics v s ga te re si sto r
SG75S12S discrete igbts fi g. 13 t y p. t h e r m a l im pedance v s t i m e
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